transistor(pnp) features z complementary to s9013 z excellent h fe linearity marking: 2t1 maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value units v cbo collector-base voltage -40 v v ceo collector-emitter voltage -25 v v ebo emitter-base voltage -5 v i c collector current -continuous -500 ma p c collector power dissipation 300 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -100 a, i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c = -1ma, i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-40v, i e =0 -0.1 a collector cut-off current i ceo v ce =-20v, i b =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a dc current gain h fe v ce =-1v, i c = -50ma 120 400 collector-emitter saturation voltage v ce (sat) i c =-500ma, i b = -50ma -0.6 v base-emitter saturation voltage v be (sat) i c =-500ma, i b = -50ma -1.2 v transition frequency f t v ce =-6v, i c = -20ma f= 30mhz 150 mhz collector output capacitance c ob v cb = -10 v,i e =0,f= 1 mhz 5 pf classification of h fe rank l h j range 120-200 200-350 300-400 so t -23 1. base 2. emitter 3. collector s901 2 1 date:2011/05 www.htsemi.com semiconductor jinyu
2 date:2011/05 www.htsemi.com semiconductor jinyu s901 2
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